大庆石油地质与开发

2018, v.37;No.188(04) 81-86

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精控压裂工艺技术在薄差层挖潜中的应用
APPLICATION OF THE PRECISELY CONTROLLED FRACTURING TECHNOLOGY IN THE POTENTIAL TAPPING OF THE THIN AND POOR RESERVOIRS

葛郎
GE Lang

摘要(Abstract):

薄差储层物性差、注采关系不完善、动用不均衡。以提高薄差层动用程度和措施增油效益为目的,开展了精控压裂工艺技术研究。根据理论研究明确穿透比对措施后增产效果的影响,确定层内最佳穿透比范围。针对储层及层内砂体的不同发育条件,在纵向上对措施目的层实施精分细卡,在平面上对施工参数实施精准控制,同时配套应用多项工艺技术。在4口井中应用精控压裂工艺技术,平均单井日增油4.8 t,累计增油6 086.9 t,且持续有效,阶段投入产出比达到1∶2.9,见到明显增油效果。应用表明,精控压裂工艺技术可以实现对薄差层的精准改造及有效动用。
The thin-and-poor reservoirs are characterized by the poor physical properties,imperfect injection-production relationship and unbalanced development degree. In order to improve the developed degree and oil stimulation effects of the thin-and-poor layers,the precisely controlled fracturing technology was studied. According to the theoretical research,the influence of the penetration ratio on the effects of increasing the production after the stimulation was clearly defined,and moreover the optimal penetration ratio in the layer was confirmed. In the light of different development conditions of the reservoirs and sandbodies in the layers,the fine partition of the stimulated target stratum was implemented in vertical direction,the operating parameters were precisely controlled in the plane,at the same time,many technologies and techniques were matched and applied. The precisely controlled fracturing technologies were carried out on 4 wells,the average daily production of the incremental oil reached 4. 8 t,the cumulative increased oil production was up to 6 086. 9 t,and furthermore the effect was sustainable,the stage inputoutput ratio reached 1∶ 2. 9,the oil incremental effect was obvious. The application shows that the technology can realize the precise reformation and effective development of the thin-and-poor layers.

关键词(KeyWords): 薄差层;精分细卡;精控压裂;有效动用
thin-and-poor layer/reservoir;fine partition;precisely controlled fracturing;effective development

Abstract:

Keywords:

基金项目(Foundation): 中国石油天然气股份有限公司重大科技专项“深层天然气高效开发技术研究与应用”(2016E-0211)

作者(Author): 葛郎
GE Lang

DOI: 10.19597/J.ISSN.1000-3754.201711052

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